TEMPERATURE AND INTENSITY DEPENDENCE OF INTERSUBBAND RELAXATION RATES FROM PHOTOVOLTAGE AND ABSORPTION

被引：71
|
作者：
HEYMAN, JN
UNTERRAINER, K
CRAIG, K
GALDRIKIAN, B
SHERWIN, MS
CAMPMAN, K
HOPKINS, PF
GOSSARD, AC
机构：
[1] UNIV CALIF SANTA BARBARA,DEPT PHYS,SANTA BARBARA,CA 93106
[2] UNIV CALIF SANTA BARBARA,CTR FREE ELECTRON LASER STUDIES,SANTA BARBARA,CA 93106
[3] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106
来源：
PHYSICAL REVIEW LETTERS | 1995年 / 74卷 / 14期
关键词：
D O I：
10.1103/PhysRevLett.74.2682
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report intersubband-scattering times (T1) in a semiconductor heterostructure with intersubband spacing below the LO phonon energy. T1 is determined by simultaneous measurements of the intersubband absorption and the photovoltage induced by far-infrared radiation (FIR) near the intersubband transition frequency. At the lowest temperature (T=10 K) and FIR intensity (I=10 mW/cm2), T1=1.2±0.4 ns, several times longer than predicted theoretically. T1 decreases strongly with increasing temperature and FIR intensity, to 20 ps at T=50 K in the linear regime, and to 15 ps at T=10 K and I=2 kW/cm2. © 1995 The American Physical Society.
引用
收藏
页码：2682 / 2685
页数：4
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