HEATS OF SUBLIMATION OF TRIPHENYL DERIVATIVES OF BORON ALUMINIUM GALLIUM AND INDIUM

被引:7
|
作者
GREENWOOD, NN
PERKINS, PG
TWENTYMA.ME
机构
关键词
D O I
10.1039/j19670002109
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
引用
收藏
页码:2109 / +
页数:1
相关论文
共 50 条
  • [32] New hypersilanides of the earth metals aluminium, gallium, and indium
    Wochele, R
    Schwarz, W
    Klinkhammer, KW
    Locke, K
    Weidlein, J
    ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 2000, 626 (09): : 1963 - 1973
  • [33] Periodates and periodato-complexes of aluminium, gallium and indium
    Hector, AL
    Levason, W
    Webster, M
    JOURNAL OF THE CHEMICAL SOCIETY-DALTON TRANSACTIONS, 1998, (20): : 3463 - 3471
  • [34] Aluminium, gallium and indium nitrides - Advanced materials in electronics
    Stejskal, J
    Leitner, J
    CHEMICKE LISTY, 2002, 96 (05): : 311 - 320
  • [35] THE BEHAVIOUR OF THE ANTIMONIDES OF ALUMINIUM, GALLIUM AND INDIUM IN THE LIQUID STATE
    GLAZOV, VM
    VERTMAN, AA
    DOKLADY AKADEMII NAUK SSSR, 1958, 123 (03): : 492 - 494
  • [36] High field electron transport in indium gallium nitride and indium aluminium nitride
    Masyukov, N. A.
    Dmitriev, A. V.
    JOURNAL OF APPLIED PHYSICS, 2017, 122 (06)
  • [37] Addendum to the research 'Atomic, melting and conversation heats of gallium, indium and thallium
    Roth, WA
    Meyer, I
    Zeumer, H
    ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1934, 216 (03): : 303 - 304
  • [38] Electron affinities of boron, aluminum, gallium, indium, and thallium
    Physical Review A. Atomic, Molecular, and Optical Physics, 1997, 56 (06):
  • [39] Electron affinities of boron, aluminum, gallium, indium, and thallium
    Eliav, E
    Ishikawa, Y
    Pyykko, P
    Kaldor, U
    PHYSICAL REVIEW A, 1997, 56 (06): : 4532 - 4536
  • [40] Ionization of boron, aluminum, gallium, and indium by electron impact
    Kim, YK
    Stone, PM
    PHYSICAL REVIEW A, 2001, 64 (05): : 11