RAMAN-STUDY OF DIFFERENT PHASES IN ION-IMPLANTED SILICON

被引：10
|
作者：
AVAKYANTS, LP [1 ]
OBRASTSOVA, ED [1 ]
GORELIK, VS [1 ]
机构：
[1] PN LEBEDEV PHYS INST,MOSCOW 119924,USSR
来源：
JOURNAL OF MOLECULAR STRUCTURE | 1990年 / 219卷
关键词：
D O I：
10.1016/0022-2860(90)80046-M
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The changing of the phase states from crystalline structure to strong disordered structure of ion implanted silicon has been studied with the help of Raman scattering technique. The different inhomogenous phase states has been established. © 1990.
引用
收藏
页码：141 / 145
页数：5
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