SOURCE DRAIN CHARACTERISTICS AND FIELD-EFFECT STUDIES OF CDS THIN-FILM FIELD-EFFECT TRANSISTOR STRUCTURES

被引:1
|
作者
DAS, VD
SRINIVASAN, GS
机构
关键词
D O I
10.1016/0040-6090(84)90437-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:232 / 232
页数:1
相关论文
共 50 条
  • [22] DRAIN-SOURCE CAPACITY OF JUNCTION FIELD-EFFECT TRANSISTOR
    MISRA, M
    PRASAD, HC
    SOLID-STATE ELECTRONICS, 1972, 15 (03) : 325 - &
  • [23] ON FIELD-EFFECT TRANSISTOR CHARACTERISTICS
    WEDLOCK, BD
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (03) : 181 - &
  • [24] Field-effect transistor with polyaniline thin film as semiconductor
    Kuo, CT
    Chiou, WH
    SYNTHETIC METALS, 1997, 88 (01) : 23 - 30
  • [25] THE INTERFACE AND THE FIELD-EFFECT IN THIN-FILM TRANSISTORS
    CHEN, I
    JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) : 396 - 400
  • [26] Field-effect transistor with deposited graphite thin film
    Inokawa, Hiroshi
    Nagase, Masao
    Hirono, Shigeru
    Goto, Touichiro
    Yamaguchi, Hiroshi
    Torimitsu, Keiichi
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (4B): : 2615 - 2617
  • [27] Field-effect transistor with deposited graphite thin film
    Inokawa, Hiroshi
    Nagase, Masao
    Hirono, Shigeru
    Goto, Touichiro
    Yamaguchi, Hiroshi
    Torimitsu, Keiichi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2007, 46 (4 B): : 2615 - 2617
  • [28] Field-effect transistor based on nanometric thin CdS films
    Mereu, B
    Sarau, G
    Pentia, E
    Draghici, V
    Lisca, A
    Botila, I
    Pintilie, L
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 109 (1-3): : 260 - 263
  • [29] FIELD-EFFECT TRANSISTOR PHANTASTRON WITH DRAIN COUPLING
    VATUTIN, EM
    TELECOMMUNICATIONS AND RADIO ENGINEERING, 1972, 26 (12) : 99 - 101
  • [30] Source and Drain Structures for Suppressing Ambipolar Characteristics of Graphene Field-Effect Transistors
    Sano, Eiichi
    Otsuji, Taiichi
    APPLIED PHYSICS EXPRESS, 2009, 2 (06)