ELECTRICAL-RESISTIVITY AND STRUCTURAL-CHANGES IN AMORPHOUS GE1-XALX THIN-FILMS UNDER THERMAL ANNEALING

被引：11
|
作者：
CATALINA, F [1 ]
AFONSO, CN [1 ]
ORTIZ, C [1 ]
机构：
[1] IBM CORP,RES LAB,SAN JOSE,CA 95120
来源：
THIN SOLID FILMS | 1988年 / 167卷 / 1-2期
关键词：
This work has beenp artiallys upportedb y CAYCIT (4/85)( Spain).W e would like .to thank Dr. J. E. E. Baglin from IBM; Yorktown Heights; N; Y; for the RBS measurementDs; r . J. L. Sacedonf rom IFM (CSIC); Madrid; for the AES depth profilea nd Mrs. M. A. Ollacarizquetafr om CIB (CSIC); for assistancwe ith theT EM;
D O I：
10.1016/0040-6090(88)90481-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
11
引用
收藏
页码：57 / 65
页数：9
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