A NEW, LAMINAR-FLOW PHOTO-CVD METHOD FOR PREPARING HYDROGENATED AMORPHOUS-SILICON FILMS

被引：4
|
作者：
FURUKAWA, A
IIDA, Y
YAMAGUCHI, T
HARADA, N
NOZAKI, H
KAMIMURA, T
YANO, K
ITO, H
OKUMURA, K
机构：
[1] TOSHIBA CO LTD,DIV SEMICOND,SAIWAI KU,KAWASAKI 210,JAPAN
[2] TOSHIBA CO LTD,DIV LCD,SAIWAI KU,KAWASAKI 210,JAPAN
[3] TOSHIBA CO LTD,CTR RES & DEV,SAIWAI KU,KAWASAKI 210,JAPAN
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷
关键词：
D O I：
10.1016/S0022-3093(05)80208-X
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A new, laminar flow type photochemical vapor deposition method has been applied to prepare a-Si:H films. The main feature of this method is introduction of Ar gas as a flow down gas through the lower part of the quartz window into the reaction chamber to keep the window highly transparent. The high deposition rate (150 angstrom/min) of the a-Si:H film has been stably maintained by optimizing the flow rate for each gas into the chamber. Utilizing this new method, we have been able to realize high quality films with low impurity content, high resistivity (> 10(11) OMEGA-cm), low dangling bond density (5 x 10(15) cm-3), etc.
引用
收藏
页码：665 / 668
页数：4
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