PHONON-ASSISTED TUNNEL IONIZATION OF DEEP IMPURITIES IN THE ELECTRIC-FIELD OF FAR-INFRARED RADIATION

被引：54

作者：

GANICHEV, SD ^{[1
]}

PRETTL, W ^{[1
]}

HUGGARD, PG ^{[1
]}

机构：

[1] AF IOFFE PHYS TECH INST, ST PETERSBURG 194021, RUSSIA

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 71卷 / 23期

关键词：

D O I：

10.1103/PhysRevLett.71.3882

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Ionization of semiconductor deep impurity centers has been observed in the far infrared, where photon energies are several factors of 10 smaller than the binding energy of the impurities. It is shown that the ionization is caused by phonon assisted tunneling in the electric field of the high power radiation. This optical method allows the investigation of the tunneling process at electric bias fields well below the threshold of avalanche breakdown.

引用

页码：3882 / 3885

页数：4

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