MULTILEVEL RANDOM-ACCESS MEMORY USING ONE TRANSISTOR PER CELL

被引：3
|
作者：
HEALD, RA
HODGES, DA
机构：
[1] UNIV WASHINGTON,DEPT ELECT ENGN,SEATTLE,WA 98105
[2] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
[3] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1976年 / 11卷 / 04期
关键词：
D O I：
10.1109/JSSC.1976.1050769
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：519 / 528
页数：10
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