SI DEPTH PROFILES IN FOCUSED-ION-BEAM-IMPLANTED GAAS

被引：8
|
作者：
BAMBA, Y
MIYAUCHI, E
NAKAJIMA, M
ARIMOTO, H
TAKAMORI, A
HASHIMOTO, H
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 01期
关键词：
D O I：
10.1143/JJAP.24.L6
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L6 / L8
页数：3
相关论文
共 50 条
  • [31] INSITU PATTERNING OF GAAS BY FOCUSED ION-BEAM
    KOSUGI, T
    YAMASHIRO, T
    AIHARA, R
    GAMO, K
    NAMBA, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06): : 3099 - 3102
  • [32] BERYLLIUM AND SULFUR ION-IMPLANTED PROFILES IN GAAS+
    COMAS, J
    PLEW, L
    JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (02) : 209 - 221
  • [33] Vacancy and interstitial depth profiles in ion-implanted silicon
    Lévêque, P
    Nielsen, HK
    Pellegrino, P
    Hallén, A
    Svensson, BG
    Kuznetsov, AY
    Wong-Leung, J
    Jagadish, C
    Privitera, V
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (02) : 871 - 877
  • [34] Depth profiles of cluster-ion-implanted BSi in silicon
    Liang, JH
    Chiang, SL
    Chen, CT
    Niu, H
    Tseng, MS
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 190 : 767 - 771
  • [35] Focused ion beam machined nanostructures depth profiled by macrochannelling ion beam analysis
    Orbons, S. M.
    van Dijk, L.
    Bozkurt, M.
    Johnston, P. N.
    Reichart, P.
    Jamieson, D. N.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 249 : 747 - 751
  • [36] Characterization of Si-doped layer in GaAs fabricated by a focused ion beam molecular beam epitaxy combined system
    Yanagisawa, J
    Nakayama, H
    Oka, K
    Nakai, M
    Wakaya, F
    Yuba, Y
    Takaoka, S
    Murase, K
    Gamo, K
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (06): : 2930 - 2933
  • [37] Ion beam studies of hydrogen implanted Si wafers
    Nurmela, A
    Henttinen, K
    Suni, T
    Tolkki, A
    Suni, I
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 219 : 747 - 750
  • [38] DEPTH PROFILES OF VACANCY-TYPE DEFECT IN SI+-IMPLANTED GAAS RESULTING FROM RAPID THERMAL ANNEALING
    LEE, JL
    SHIM, KH
    KIM, JS
    PARK, HM
    MA, DS
    TANIGAWA, S
    UEDONO, A
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (01) : 396 - 397
  • [39] Carrier activation in in situ Si-doped GaAs layers fabricated by a focused Si ion beam and molecular beam epitaxy combined system
    Hada, T
    Miyamoto, H
    Yanagisawa, J
    Wakaya, F
    Yuba, Y
    Gamo, K
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 175 : 751 - 755
  • [40] GaAs milling with neon focused ion beam: Comparison with gallium focused ion beam milling and subsurface damage analysis
    Xia, Deying
    Jiang, Ying-Bing
    Notte, John
    Runt, Doug
    APPLIED SURFACE SCIENCE, 2021, 538
12345