SI DEPTH PROFILES IN FOCUSED-ION-BEAM-IMPLANTED GAAS

被引：8
|
作者：
BAMBA, Y
MIYAUCHI, E
NAKAJIMA, M
ARIMOTO, H
TAKAMORI, A
HASHIMOTO, H
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 01期
关键词：
D O I：
10.1143/JJAP.24.L6
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L6 / L8
页数：3
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