THERMAL-STABILITY OF RAPIDLY ANNEALED RUTHENIUM N-GAAS SCHOTTKY CONTACTS

被引：1
|
作者：
EFTEKHARI, G
机构：
[1] Department of Electrical Engineering, State University of New York, College at New Paltz, New Paltz, NY, 12561-2499
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 5A期
关键词：
STABILITY; RAPID THERMAL ANNEALING; SCHOTTKY BARRIER; GALLIUM ARSENIDE; RUTHENIUM;
D O I：
10.1143/JJAP.32.1934
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this paper the thermal stability of ruthenium n-GaAs is reported. The annealing time was 15 s and annealing temperature was varied in the range 200-800-degrees-C. The contacts were found stable for annealing temperature up to about 750-degrees-C. For temperatures above 750-degrees-C a sharp decrease in barrier height (i.e. degradation) was observed. Also the ideality factor and reverse current showed sharp increase. This is considered as result of chemical reactions at the interface. The removal of native oxide layer and defects at the interface were used to explain the observations.
引用
收藏
页码：1934 / 1935
页数：2
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