HIGH-QUALITY ULTRATHIN INAS/GAAS QUANTUM WELLS GROWN BY STANDARD AND LOW-TEMPERATURE MODULATED-FLUXES MOLECULAR-BEAM EPITAXY

被引:64
|
作者
GERARD, JM
MARZIN, JY
机构
关键词
D O I
10.1063/1.99859
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:568 / 570
页数:3
相关论文
共 50 条
  • [1] HIGH-QUALITY QUANTUM WELLS OF INGAP GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    HAFICH, MJ
    QUIGLEY, JH
    OWENS, RE
    ROBINSON, GY
    LI, D
    OTSUKA, N
    APPLIED PHYSICS LETTERS, 1989, 54 (26) : 2686 - 2688
  • [2] LOW-TEMPERATURE PHOTOLUMINESCENCE PROPERTIES OF HIGH-QUALITY GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    RAO, EVK
    ALEXANDRE, F
    MASSON, JM
    ALLOVON, M
    GOLDSTEIN, L
    JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 503 - 508
  • [3] SUBMONOLAYER AND SUPERMONOLAYER OF INAS QUANTUM-WELLS GROWN ON GAAS BY MOLECULAR-BEAM EPITAXY
    OKAMOTO, K
    UMEZAKI, T
    OKADA, T
    SHINOHARA, R
    SOLID-STATE ELECTRONICS, 1995, 38 (07) : 1335 - 1338
  • [4] APPLICATIONS OF GAAS GROWN AT A LOW-TEMPERATURE BY MOLECULAR-BEAM EPITAXY
    MISHRA, UK
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 22 (01): : 72 - 77
  • [5] PHOTOLUMINESCENCE OF HIGH-QUALITY SIGE QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY
    WACHTER, M
    SCHAFFLER, F
    HERZOG, HJ
    THONKE, K
    SAUER, R
    APPLIED PHYSICS LETTERS, 1993, 63 (03) : 376 - 378
  • [6] Ultrathin InAs/GaAs single quantum wells grown on GaAs (111)A substrates by molecular beam epitaxy
    Mashita, M
    Numata, T
    Koo, BH
    Makino, H
    Yao, T
    IEE PROCEEDINGS-OPTOELECTRONICS, 2003, 150 (04): : 399 - 402
  • [7] EXTREMELY HIGH-QUALITY GAINAS/A1INAS SINGLE QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY
    SCOTT, EG
    DAVEY, ST
    DAVIES, GJ
    ELECTRONICS LETTERS, 1987, 23 (14) : 761 - 763
  • [8] GAAS/ALGAAS QUANTUM-WELLS GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY WITH ATOMIC-HYDROGEN IRRADIATION
    OKADA, Y
    OHTA, S
    FUJITA, T
    KAWABE, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B): : 759 - 762
  • [9] LOW-TEMPERATURE GAAS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY
    DROOPAD, R
    SHIRALAGI, KT
    PUECHNER, RA
    CHOI, KY
    MARACAS, GN
    JOURNAL OF CRYSTAL GROWTH, 1992, 120 (1-4) : 200 - 205
  • [10] HIGH-QUALITY STRAINED QUANTUM WIRES GROWN BY MOLECULAR-BEAM EPITAXY ON (100) GAAS SUBSTRATE
    CHEN, YP
    REED, JD
    SCHAFF, WJ
    EASTMAN, LF
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02): : 1280 - 1282