SURFACE EFFECTS IN BALLISTIC-ELECTRON-EMISSION MICROSCOPY

被引：18
|
作者：
SIRRINGHAUS, H
LEE, EY
VONKANEL, H
机构：
[1] Laboratorium für Festkörperphysik, Eidgenössische Technische Hochschule Zürich
来源：
SURFACE SCIENCE | 1995年 / 331卷
关键词：
BALLISTIC ELECTRON EMISSION MICROSCOPY (BEEM); HETEROJUNCTIONS; LOW INDEX SINGLE CRYSTAL SURFACES; METAL-METAL NONMAGNETIC THIN FILM STRUCTURES; METAL-SEMICONDUCTOR INTERFACES; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SCANNING TUNNELING SPECTROSCOPIES; SCHOTTKY BARRIER; SILICIDES; SINGLE CRYSTAL EPITAXY; SURFACE ELECTRONIC PHENOMENA; SURFACE RELAXATION AND RECONSTRUCTION; SURFACE STRUCTURE;
D O I：
10.1016/0039-6028(95)00380-0
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Tn situ ballistic-electron-emission microscopy (BEEM) and scanning tunneling spectroscopy have been performed at 77 K on CoSi2/Si(111) films grown by molecular beam epitaxy. Different atomic surface structures induce significant variations of the BEEM current. For the first time periodic surface structures could be imaged at atomic resolution by BEEM. This surface effect is explained by the energy distribution of the injected electrons, which is influenced by surface-induced variations of the tunneling barrier height. Quantum size effects in the local density of states can be correlated with subtle features in the BEEM spectra.
引用
收藏
页码：1277 / 1282
页数：6
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