SURFACE EFFECTS IN BALLISTIC-ELECTRON-EMISSION MICROSCOPY

被引:18
|
作者
SIRRINGHAUS, H
LEE, EY
VONKANEL, H
机构
[1] Laboratorium für Festkörperphysik, Eidgenössische Technische Hochschule Zürich
关键词
BALLISTIC ELECTRON EMISSION MICROSCOPY (BEEM); HETEROJUNCTIONS; LOW INDEX SINGLE CRYSTAL SURFACES; METAL-METAL NONMAGNETIC THIN FILM STRUCTURES; METAL-SEMICONDUCTOR INTERFACES; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SCANNING TUNNELING SPECTROSCOPIES; SCHOTTKY BARRIER; SILICIDES; SINGLE CRYSTAL EPITAXY; SURFACE ELECTRONIC PHENOMENA; SURFACE RELAXATION AND RECONSTRUCTION; SURFACE STRUCTURE;
D O I
10.1016/0039-6028(95)00380-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Tn situ ballistic-electron-emission microscopy (BEEM) and scanning tunneling spectroscopy have been performed at 77 K on CoSi2/Si(111) films grown by molecular beam epitaxy. Different atomic surface structures induce significant variations of the BEEM current. For the first time periodic surface structures could be imaged at atomic resolution by BEEM. This surface effect is explained by the energy distribution of the injected electrons, which is influenced by surface-induced variations of the tunneling barrier height. Quantum size effects in the local density of states can be correlated with subtle features in the BEEM spectra.
引用
收藏
页码:1277 / 1282
页数:6
相关论文
共 50 条
  • [1] DIFFUSIVE AND INELASTIC-SCATTERING IN BALLISTIC-ELECTRON-EMISSION SPECTROSCOPY AND BALLISTIC-ELECTRON-EMISSION MICROSCOPY
    LEE, EY
    TURNER, BR
    SCHOWALTER, LJ
    JIMENEZ, JR
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (04): : 1579 - 1583
  • [2] Ballistic-electron-emission microscopy of conduction-electron surface states
    Weilmeier, MK
    Rippard, WH
    Buhrman, RA
    PHYSICAL REVIEW B, 2000, 61 (11): : 7161 - 7164
  • [3] Ballistic-electron-emission microscopy on epitaxial silicides
    Von Kanel, Hans
    Meyer, Thomas
    Klemenc, Michaela
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (6 B): : 3800 - 3804
  • [4] Ballistic-electron-emission microscopy on epitaxial silicides
    von Kanel, H
    Meyer, T
    Klemenc, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (6B): : 3800 - 3804
  • [5] Ballistic-electron-emission microscopy of semiconductor heterostructures
    Bell, LD
    Narayanamurti, V
    CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE, 1998, 3 (01): : 38 - 44
  • [6] LOW-TEMPERATURE BALLISTIC-ELECTRON-EMISSION MICROSCOPY
    FIRST, PN
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1994, 207 : 196 - COLL
  • [7] IMAGING SUBSURFACE INTERFACES BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY
    BELL, LD
    KAISER, WJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) : C373 - C373
  • [8] QUANTITATIVE STUDY OF ELECTRON-TRANSPORT IN BALLISTIC-ELECTRON-EMISSION MICROSCOPY
    BAUER, A
    CUBERES, MT
    PRIETSCH, M
    KAINDL, G
    PHYSICAL REVIEW LETTERS, 1993, 71 (01) : 149 - 152
  • [9] Ballistic-electron-emission spectroscopy
    H. von Känel
    M. Klemenc
    T. Meyer
    Applied Physics A, 2001, 72 : S227 - S232
  • [10] BALLISTIC-ELECTRON-EMISSION MICROSCOPY OF THE AN-SI (100) INTERFACE
    CORATGER, R
    AJUSTRON, F
    BEAUVILLAIN, J
    JOURNAL DE PHYSIQUE III, 1993, 3 (12): : 2211 - 2220