ANGLED CHLORINE ION-BEAM ASSISTED ETCHING, A TECHNIQUE FOR SCULPTURING IN GAAS AND ALGAAS

被引：0
|
作者：
GOODHUE, WD [1 ]
PANG, SW [1 ]
HOLLIS, MA [1 ]
DONNELLY, JP [1 ]
机构：
[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 04期
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：S17 / S17
页数：1
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