High-temperature characteristics of Al(x)Gai(1-x)N/GaN Schottky diodes

被引：6

作者：

Zhang Xiaoling ^{[1
]}

Li Fei ^{[1
]}

Lu Changzhi ^{[1
]}

Xie Xuesong ^{[1
]}

Li Ying ^{[2
]}

Mohammad, S. N. ^{[3
]}

机构：

[1] Beijing Univ Technol, Dept Elect Informat & Control Engn, Beijing 100124, Peoples R China

[2] Shougang Inst Technol, Dept Mech & Elect Engn, Beijing 100041, Peoples R China

[3] Howard Univ, Dept Elect & Comp Engn, Washington, DC 20059 USA

来源：

JOURNAL OF SEMICONDUCTORS | 2009年 / 30卷 / 03期

关键词：

Schottky diodes; A1GaN/; GaN; high-temperature;

D O I：

10.1088/1674-4926/30/3/034001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

High-temperature characteristics of the metal/Al(x)Gai(1-x)N/GaN M/S/S (M/S/S) diodes have been studied with current voltage (I-V) and capacitance voltage (C-V) measurements at high temperatures. Due to the presence of the piezoelectric polarization field and a quantum well at the Al(x)Gai(1-x)N/GaN interface, the Al(x)Gai(1-x)N/GaN diodes show properties distinctly different from those of the Al(x)Gai(1-x)N diodes. For the Al(x)Gai(1-x)N/GaN diodes, an increase in temperature accompanies an increase in barrier height and a decrease in ideality factor, while the Al(x)Gai(1-x)N diodes are opposite. Furthermore, at room temperature, both reverse leakage current and reverse breakdown voltage are superior for the Al(x)Gai(1-x)N/GaN diodes to those for the Al(x)Gai(1-x)N diodes.

引用

页数：7

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