SCANNING-TUNNELING-MICROSCOPY OF DIAMOND IRRADIATED WITH HIGH-ENERGY IONS

被引：3
|
作者：
VARICHENKO, VS
ZAITSEV, AM
RUSETSKII, MS
STELMAKH, VF
DEWELDIGE, K
FRIES, T
WANDELT, K
DIDYK, AJ
LAPTEV, VA
机构：
[1] UNIV BONN, INST THEORET & PHYS CHEM, D-53115 BONN, GERMANY
[2] UNIV MINSK, DEPT PHYS, MINSK 220080, BELARUS
[3] JOINT INST NUCL RES, DUBNA 141980, RUSSIA
[4] INST SMS, ALEKSANDROV 601600, RUSSIA
来源：
DIAMOND AND RELATED MATERIALS | 1994年 / 3卷 / 4-6期
关键词：
D O I：
10.1016/0925-9635(94)90254-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The surfaces of boron-doped synthetic diamonds have been investigated by scanning tunnelling microscopy before and after irradiation at room temperature with Kr ions of an energy of about 1 MeV a.m.u.-1 and a dose of about 10(12) ions cm -2. The structures observed after irradiation showed diameters ranging from 3 to 20 nm and are attributed to single-ion tracks and multiple hits of ions at the same position on the surface. The distribution of the surface roughening by ion impact was found to be inhomogeneous on a submicron scale. This is proposed to be due to an inhomogeneous boron doping during the process of crystal growth.
引用
收藏
页码：711 / 714
页数：4
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