HETEROEPITAXY OF INSULATOR METAL SILICON STRUCTURES - CAF2/NISI2/SI(111) AND CAF2/COSI2/SI(111)

被引：19
|
作者：
FATHAUER, RW
HUNT, BD
SCHOWALTER, LJ
OKAMOTO, M
HASHIMOTO, S
机构：
[1] GE,CTR CORP RES & DEV,POB 8,SCHENECTADY,NY 12301
[2] SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222
来源：
APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 02期
关键词：
D O I：
10.1063/1.97353
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：64 / 66
页数：3
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