HIGH TEMPERATURE HALL EFFECT IN CUPROUS OXIDE

被引：17

作者：

MCKINZIE, HL

OKEEFFE, M

机构：

来源：

PHYSICS LETTERS A | 1967年 / A 24卷 / 03期

关键词：

D O I：

10.1016/0375-9601(67)90728-1

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：137 / &

共 50 条

[31] ON THE INNER PHOTO-EFFECT OF CUPROUS OXIDE
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[32] ELECTRICAL-CONDUCTIVITY OF CUPROUS-OXIDE SINGLE-CRYSTALS AT HIGH-TEMPERATURE
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[33] SULFATING OF CUPROUS SULFIDE AND CUPROUS OXIDE
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[34] CRYSTAL-STRUCTURE OF HIGH-TEMPERATURE CUPROUS IODIDE AND CUPROUS BROMIDE
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[37] The Becquerel effect as of cuprous oxide barrier photoelectric effect.
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[38] THE TEMPERATURE DEPENDENCE OF THE ZERO BIAS RESISTANCE OF CUPROUS OXIDE RECTIFIERS
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[39] RADIATIVE RECOMBINATION IN CUPROUS OXIDE AT HIGH EXCITATION INTENSITIES
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[40] HIGH-PRESSURE TRANSFORMATIONS IN CUPROUS-OXIDE
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