HIGH TEMPERATURE HALL EFFECT IN CUPROUS OXIDE

被引：17

作者：

MCKINZIE, HL

OKEEFFE, M

机构：

来源：

PHYSICS LETTERS A | 1967年 / A 24卷 / 03期

关键词：

D O I：

10.1016/0375-9601(67)90728-1

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：137 / &

共 50 条

[1] Hall effect and conductivity of cuprous oxide
Angello, SJ
PHYSICAL REVIEW, 1942, 62 (7/8): : 371 - 377
[2] Comment on the Hall effect of cuprous oxide.
v. Auwers, O.
ZEITSCHRIFT FUR PHYSIK, 1935, 93 (1-2): : 90 - 91
[3] The electrical conductivity and isothermal Hall effect in cuprous oxide
Feldman, W
PHYSICAL REVIEW, 1943, 64 (3/4): : 113 - 118
[4] HALL EFFECT AND ELECTRICAL CONDUCTIVITY OF SINGLE CRYSTAL CUPROUS OXIDE
WRIGHT, MR
TOTH, RS
TRIVICH, D
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (08) : C208 - C208
[5] THE EFFECT OF TEMPERATURE ON ELECTRODEPOSITION OF CUPROUS-OXIDE
RAKHSHANI, AE
VARGHESE, J
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 105 (01): : 183 - 188
[6] THE MECHANISM OF CUPROUS OXIDE CRYSTAL GROWTH AT HIGH TEMPERATURE
ANDRIEVSKY, AI
MISHCHENKO, MT
DOKLADY AKADEMII NAUK SSSR, 1956, 107 (01): : 81 - &
[7] The Effect of Electrolyte Temperature on the Electrodeposition of Cuprous Oxide Films
Lee, Yuan-Gee
Wang, Jee-Ray
Chuang, Miao-Ju
Chen, Der-Wei
Hou, Kung-Hsu
INTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCE, 2017, 12 (01): : 507 - 516
[8] PHYSICOCHEMICAL PROPERTIES OF CUPROUS-OXIDE AT HIGH-TEMPERATURE
MALUENDA, J
FARHI, R
PETOTERVAS, G
REVUE INTERNATIONALE DES HAUTES TEMPERATURES ET DES REFRACTAIRES, 1980, 17 (02): : 148 - 153
[9] The temperature dependence of the voltage of cuprous oxide
Moench, G.
ZEITSCHRIFT FUR PHYSIK, 1934, 90 (9-10): : 576 - 585
[10] EFFECT OF SILICON ON CUPROUS OXIDE
NEMOTO, T
NAKANO, T
JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (04) : 543 - &

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