STIMULATED-PICOSECOND-PHOTON-ECHO STUDIES OF LOCALIZED EXCITON RELAXATION AND DEPHASING IN GAAS/ALXGA1-XAS MULTIPLE QUANTUM-WELLS

被引：50
|
作者：
WEBB, MD
CUNDIFF, ST
STEEL, DG
机构：
[1] The Harrison M. Randall Laboratory of Physics, The University of Michigan, Ann Arbor
来源：
PHYSICAL REVIEW B | 1991年 / 43卷 / 15期
关键词：
D O I：
10.1103/PhysRevB.43.12658
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report measurements of the dynamics of localized excitons in GaAs/AlxGa1-xAs multiple-quantum-well structures at low temperature based on stimulated-picosecond-photon-echo measurements. The results show that at low temperature excitons relax by phonon-assisted migration between localization sites and at higher temperatures are thermally activated to delocalized states. The measurements confirm recent theoretical predictions, but show the unexpected presence of additional dephasing.
引用
收藏
页码：12658 / 12661
页数：4
相关论文
共 50 条
  • [41] Exciton relaxation and level repulsion in GaAs/AlxGa1-xAs quantum wires
    Feltrin, A
    Idrissi Kaitouni, R
    Crottini, A
    Dupertuis, MA
    Staehli, JL
    Deveaud, B
    Savona, V
    Wang, XL
    Ogura, M
    PHYSICAL REVIEW B, 2004, 69 (20) : 205321 - 1
  • [42] Thick AlxGa1-xAs in GaAs/AlxGa1-xAs quantum wells: A leaky barrier
    Kim, DS
    Ko, HS
    Kim, YM
    Rhee, SJ
    Hong, SC
    Yee, DS
    Woo, JC
    Choi, HJ
    Ihm, J
    17TH CONGRESS OF THE INTERNATIONAL COMMISSION FOR OPTICS: OPTICS FOR SCIENCE AND NEW TECHNOLOGY, PTS 1 AND 2, 1996, 2778 : 729 - 730
  • [43] 2 ELECTRON TRANSITIONS OF THE EXCITON BOUND AT THE SI DONOR CONFINED IN GAAS ALXGA1-XAS QUANTUM-WELLS
    HOLTZ, PO
    MONEMAR, B
    SUNDARAM, M
    MERZ, JL
    GOSSARD, AC
    JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (06) : 513 - 518
  • [44] DECAY MEASUREMENTS OF FREE-EXCITON AND BOUND-EXCITON RECOMBINATION IN DOPED GAAS/ALXGA1-XAS QUANTUM-WELLS
    BERGMAN, JP
    HOLTZ, PO
    MONEMAR, B
    SUNDARAM, M
    MERZ, JL
    GOSSARD, AC
    PHYSICAL REVIEW B, 1991, 43 (06): : 4765 - 4770
  • [45] ABSORPTION SATURATION OF INTERSUBBAND OPTICAL-TRANSITIONS IN GAAS/ALXGA1-XAS MULTIPLE QUANTUM-WELLS
    CUI, DF
    CHEN, ZH
    PAN, SH
    LU, HB
    YANG, GZ
    PHYSICAL REVIEW B, 1993, 47 (11): : 6755 - 6757
  • [46] OPTICAL ALIGNMENT AND RESONANT RAMAN-SCATTERING IN GAAS/ALXGA1-XAS MULTIPLE QUANTUM-WELLS
    FROMMER, A
    COHEN, E
    RON, A
    PFEIFFER, L
    JOURNAL OF LUMINESCENCE, 1992, 53 (1-6) : 351 - 354
  • [47] PARTICLE LOCALIZATION AND PHONON SIDE-BAND IN GAAS/ALXGA1-XAS MULTIPLE QUANTUM-WELLS
    BRENER, I
    OLSZAKIER, M
    COHEN, E
    EHRENFREUND, E
    RON, A
    PFEIFFER, L
    PHYSICAL REVIEW B, 1992, 46 (12): : 7927 - 7930
  • [48] SPIN-FLIP RAMAN-SCATTERING IN GAAS/ALXGA1-XAS MULTIPLE QUANTUM-WELLS
    SAPEGA, VF
    CARDONA, M
    PLOOG, K
    IVCHENKO, EL
    MIRLIN, DN
    PHYSICAL REVIEW B, 1992, 45 (08): : 4320 - 4326
  • [49] STUDY OF THE PROPERTIES OF INFRARED INTERSUBBAND TRANSITION IN DOPED GAAS/ALXGA1-XAS MULTIPLE QUANTUM-WELLS
    CHEN, ZH
    CUI, DF
    ZHOU, JM
    PAN, SH
    HUANG, Q
    ZHOU, YL
    LU, HB
    XIE, YL
    FENG, SM
    YANG, GZ
    CHINESE PHYSICS LETTERS, 1990, 7 (07) : 319 - 322
  • [50] High magnetic field studies of charged exciton localization in GaAs/AlxGa1-xAs quantum wells
    Jadczak, J.
    Bryja, L.
    Czko, K. R.
    Kubisa, M.
    Wojs, A.
    Potemski, M.
    Liu, F.
    Yakoylev, D. R.
    Bayer, M.
    Nicoll, C. A.
    Farrer, I.
    Ritchie, D. A.
    APPLIED PHYSICS LETTERS, 2014, 105 (11)
12345