LARGE-SIGNAL ANALYSIS OF IMPATT DIODES

被引：2

作者：

MATHUR, PC ^{[1
]}

SHARMA, V ^{[1
]}

机构：

[1] UNIV DELHI, DEPT PHYS & ASTROPHYS, MICROWAVE LAB, DELHI 110007, INDIA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1976年 / 36卷 / 01期

关键词：

D O I：

10.1002/pssa.2210360129

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：269 / 274

页数：6

共 50 条

[21] LARGE-SIGNAL ANALYSIS OF LO-HI-LO DOUBLE-DRIFT SILICON IMPATT DIODES AT 50 GHZ
CHANG, LC
HU, DH
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (09) : 1137 - 1140
[22] LARGE-SIGNAL LUMPED MODELING AND CHARACTERIZATION OF AN IMPATT DIODE
MOFFAT, JW
MITCHELL, RH
INTERNATIONAL JOURNAL OF ELECTRONICS, 1973, 35 (04) : 465 - 477
[23] LARGE-SIGNAL LUMPED MODELING AND CHARACTERIZATION OF AN IMPATT DIODE
MOFFAT, JW
MITCHELL, RH
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (12) : 1297 - &
[24] CURRENT EXCITED LARGE-SIGNAL ANALYSIS OF IMPATT DEVICES AND ITS CIRCUIT IMPLICATIONS
GUPTA, M
LOMAX, RJ
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (04) : 395 - 399
[25] CURRENT TUNING AND CONCEPT OF AVALANCHE RESONANCE IN IMPATT DIODES UNDER LARGE-SIGNAL OPERATING-CONDITIONS
GRIERSON, JR
SOLID-STATE ELECTRONICS, 1975, 18 (05) : 459 - 468
[26] Large-Signal Analysis of Terahertz Generation in Submicrometer GaN Diodes
Barry, E. A.
Sokolov, V. N.
Kim, K. W.
Trew, R. J.
IEEE SENSORS JOURNAL, 2010, 10 (03) : 765 - 771
[27] NOISE IN IMPATT-DIODE OSCILLATORS AT LARGE-SIGNAL LEVELS
GOEDBLOED, JJ
VLAARDINGERBROEK, MT
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (06) : 342 - 351
[28] IMPATT DIODE QUASI-STATIC LARGE-SIGNAL MODEL
DECKER, DR
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (08) : 469 - 479
[29] Large-signal analysis of self-pulsating laser diodes
Adams, MJ
Sinthanayothin, C
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES V, 1997, 2994 : 513 - 520
[30] LARGE-SIGNAL RESISTANCE OF IMPATT DIODES OBTAINED FROM RF-POWER TO DC-CURRENT CHARACTERISTICS
DETLEFSEN, J
SCHUCK, WD
NACHRICHTENTECHNISCHE ZEITSCHRIFT, 1974, 27 (07): : 280 - 282

← 1 2 3 4 5 →