ELECTRICAL PROPERTY IMPROVEMENTS IN IN-DOPED DISLOCATION-FREE GAAS BY BULK ANNEALING

被引：12

|

作者：

OSAKA, J

HYUGA, F

WATANABE, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 12期

关键词：

D O I：

10.1063/1.96313

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1307 / 1309

页数：3

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