ELECTRICAL PROPERTY IMPROVEMENTS IN IN-DOPED DISLOCATION-FREE GAAS BY BULK ANNEALING

被引：12
|
作者：
OSAKA, J
HYUGA, F
WATANABE, K
机构：
来源：
APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 12期
关键词：
D O I：
10.1063/1.96313
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1307 / 1309
页数：3
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