HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY STUDY OF THE SB-GAAS(110) SYSTEM

被引：3
|
作者：
ANNOVI, G
BETTI, MG
DELPENNINO, U
MARIANI, C
机构：
[1] Dipartimento di Fisica, Università di Modena, I-41100 Modena
来源：
VACUUM | 1990年 / 41卷 / 1-3期
关键词：
D O I：
10.1016/0042-207X(90)90454-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A study of the Sb{single bond}GaAs(110) system, over a wide range of coverage, by means of High Resolution Electron Energy Loss Spectroscopy is presented. A structure related to an electronic transition proper of antimony is shown and interpreted. The influence of Sb on the Fuchs-Kliewer phonon as well as on the free carrier plasmon of n-doped GaAs is shown and related to screening properties of the overlayer, in correspondance to a critical coverage of about 15 monolayers. © 1990 Pergamon Press plc.
引用
收藏
页码：695 / 698
页数：4
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