IMPROVED POTENTIAL GRADING METHODS WITH SILICON-CARBIDE PAINTS FOR HIGH-VOLTAGE COILS

被引：7
|
作者：
KIMURA, K
HIRABAYASHI, S
机构：
来源：
IEEE TRANSACTIONS ON ELECTRICAL INSULATION | 1985年 / 20卷 / 03期
关键词：
D O I：
10.1109/TEI.1985.348775
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：511 / 517
页数：7
相关论文
共 50 条
  • [41] INVESTIGATION OF CURRENT-VOLTAGE CHARACTERISTICS OF SILICON-CARBIDE DIODE STRUCTURES
    ANIKIN, MM
    LEBEDEV, AA
    POPOV, IV
    STRELCHUK, AM
    SUVOROV, AV
    SYRKIN, AL
    CHELNOKOV, VE
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (05): : 532 - 534
  • [42] HIGH-TEMPERATURE OPERATION OF SILICON-CARBIDE MOSFET
    KONDO, Y
    TAKAHASHI, T
    ISHII, K
    HAYASHI, Y
    SAKUMA, E
    MISAWA, S
    DAIMON, H
    YAMANAKA, M
    YOSHIDA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (02): : 310 - 311
  • [43] SINTERING OF HIGH-PRESSURE CIPED SILICON-CARBIDE
    SAIKUDO, R
    FUKUNAGA, O
    AMERICAN CERAMIC SOCIETY BULLETIN, 1984, 63 (08): : 1001 - 1001
  • [44] SILICON-CARBIDE MATERIALS FOR HIGH DUTY SEAL APPLICATIONS
    BERROTH, KE
    LUBRICATION ENGINEERING, 1990, 46 (12): : 770 - 773
  • [45] KINETICS OF HIGH-TEMPERATURE OXIDATION OF SILICON-CARBIDE
    GOGOTSI, YG
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII KHIMIYA I KHIMICHESKAYA TEKHNOLOGIYA, 1987, 30 (07): : 54 - 57
  • [46] Design and Characterization of High-Voltage Silicon Carbide Emitter Turn-off Thyristor
    Wang, Jun
    Huang, Alex Q.
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2009, 24 (5-6) : 1189 - 1197
  • [47] Potential of Ultra-High Voltage Silicon Carbide Semiconductor Devices
    Johannesson, Daniel
    Nawaz, Muhammad
    Jacobs, Keijo
    Norrga, Staffan
    Nee, Hans-Peter
    2016 IEEE 4TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2016, : 253 - 258
  • [48] Gate breakdown of high-voltage P-LDMOS and improved methods
    National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China
    J. Southeast Univ. Engl. Ed., 2006, 1 (35-38):
  • [49] CVD OF SILICON-CARBIDE AND SILICON-NITRIDE AND ITS APPLICATION FOR PREPARATION OF IMPROVED SILICON CERAMICS
    FITZER, E
    HEGEN, D
    STROHMEIER, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C353 - C353
  • [50] High voltage silicon carbide devices
    Baliga, BJ
    WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE, 1998, 512 : 77 - 88
12345