IMPROVED POTENTIAL GRADING METHODS WITH SILICON-CARBIDE PAINTS FOR HIGH-VOLTAGE COILS

被引:7
|
作者
KIMURA, K
HIRABAYASHI, S
机构
来源
关键词
D O I
10.1109/TEI.1985.348775
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:511 / 517
页数:7
相关论文
共 50 条
  • [1] HIGH-VOLTAGE SWITCHING IN SILICON-CARBIDE STRUCTURES
    BRODOVOI, VA
    GOZAK, AC
    PEKA, GP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (08): : 897 - 899
  • [2] HIGH-VOLTAGE SILICON-CARBIDE RECTIFIERS - RESULTS OF EXPERIMENTS AND SIMULATION
    RAMBERG, LP
    SAVAGE, S
    GUSTAFSSON, U
    SCHONER, A
    PHYSICA SCRIPTA, 1994, 54 : 65 - 67
  • [3] Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Devices
    Hefner, Allen
    Ryu, Sei-Hyung
    Hull, Brett
    Berning, David
    Hood, Colleen
    Ortiz-Rodriguez, Jose M.
    Rivera-Lopez, Angel
    Duong, Tam
    Akuffo, Adwoa
    Hernandez-Mora, Madelaine
    CONFERENCE RECORD OF THE 2006 IEEE INDUSTRY APPLICATIONS CONFERENCE, FORTY-FIRST IAS ANNUAL MEETING, VOL 1-5, 2006, : 330 - 337
  • [4] SILICON-CARBIDE HIGH-VOLTAGE (400 V) SCHOTTKY-BARRIER DIODES
    BHATNAGAR, M
    MCLARTY, PK
    BALIGA, BJ
    IEEE ELECTRON DEVICE LETTERS, 1992, 13 (10) : 501 - 503
  • [5] High-Voltage Silicon-Carbide Thyristor with an n-type Blocking Base
    M. E. Levinshtein
    T. T. Mnatsakanov
    S. N. Yurkov
    A. G. Tandoev
    Sei-Hyung Ryu
    J. W. Palmour
    Semiconductors, 2016, 50 : 404 - 410
  • [6] High-Voltage Silicon-Carbide Thyristor with an n-type Blocking Base
    Levinshtein, M. E.
    Mnatsakanov, T. T.
    Yurkov, S. N.
    Tandoev, A. G.
    Ryu, Sei-Hyung
    Palmour, J. W.
    SEMICONDUCTORS, 2016, 50 (03) : 404 - 410
  • [7] STRESS GRADING FOR HIGH-VOLTAGE MOTOR AND GENERATOR COILS
    ROBERTS, A
    IEEE ELECTRICAL INSULATION MAGAZINE, 1995, 11 (04) : 26 - 31
  • [8] A NOVEL SILICON-CARBIDE BASED HIGH-BIDIRECTIONAL SWITCHING DEVICE FOR HIGH-VOLTAGE CONTROL APPLICATIONS
    HWANG, JD
    FANG, YK
    CHEN, KH
    CHIU, HY
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (12) : 2246 - 2248
  • [9] Gate Charge Control of High-Voltage Silicon-Carbide (SiC) MOSFET in Power Converter Applications
    Musumeci, S.
    2015 INTERNATIONAL CONFERENCE ON CLEAN ELECTRICAL POWER (ICCEP), 2015, : 709 - 715
  • [10] HIGH-VOLTAGE ELECTRON TRANSMISSION MICROSCOPY OF PYROLYTIC SILICON-CARBIDE COATINGS FROM NUCLEAR FUEL PARTICLES
    HUDSON, B
    SHELDON, BE
    JOURNAL OF MICROSCOPY-OXFORD, 1973, 97 (JAN-M): : 113 - 119