INTERPRETATION OF QUASI-STATIC C-V CHARACTERISTICS OF MOSOS CAPACITORS ON SOI SUBSTRATES

被引：5

作者：

FLANDRE, D ^{[1
]}

LOO, T ^{[1
]}

VERLINDEN, P ^{[1
]}

VANDEWIELE, F ^{[1
]}

机构：

[1] CATHOLIC UNIV LOUVAIN,MICROELECTR LAB,B-1348 LOUVAIN,BELGIUM

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 01期

关键词：

CAPACITORS; METAL-OXIDE-SEMICONDUCTOR DEVICES;

D O I：

10.1049/el:19910028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication of two-terminal MOSOS capacitors incorporating SOI substrates is described. Results of quasi-static C-V measurements are presented for the first time and compared to existing theoretical models. The suitability of the technique to assess rapidly the quality of an SOI MOS fabrication process is finally discussed.

引用

页码：43 / 44

页数：2

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