INFRARED REFLECTANCE AND ABSORPTION OF N-TYPE INP

被引:36
|
作者
KIM, OK
BONNER, WA
机构
关键词
D O I
10.1007/BF02655296
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:827 / 836
页数:10
相关论文
共 50 条
  • [41] HOT-CARRIER INFRARED-ABSORPTION IN N-TYPE GERMANIUM
    SEEGER, K
    VANA, H
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 96 (02): : 605 - 610
  • [42] COMPARISON OF MICROWAVE VELOCITY/FIELD CHARACTERISTICS OF N-TYPE INP AND N-TYPE GAAS
    LAM, HT
    ACKET, GA
    ELECTRONICS LETTERS, 1971, 7 (24) : 722 - +
  • [43] Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire
    Tsykaniuk, Bogdan I.
    Nikolenko, Andrii S.
    Strelchuk, Viktor V.
    Naseka, Viktor M.
    Mazur, Yuriy I.
    Ware, Morgan E.
    DeCuir, Eric A., Jr.
    Sadovyi, Bogdan
    Weyher, Jan L.
    Jakiela, Rafal
    Salamo, Gregory J.
    Belyaev, Alexander E.
    NANOSCALE RESEARCH LETTERS, 2017, 12
  • [44] AU-(N-TYPE) INP SCHOTTKY BARRIERS AND THEIR USE IN DETERMINING MAJORITY CARRIER CONCENTRATIONS IN N-TYPE INP
    SMITH, BL
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1973, 6 (11) : 1358 - 1362
  • [45] Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire
    Bogdan I. Tsykaniuk
    Andrii S. Nikolenko
    Viktor V. Strelchuk
    Viktor M. Naseka
    Yuriy I. Mazur
    Morgan E. Ware
    Eric A. DeCuir
    Bogdan Sadovyi
    Jan L. Weyher
    Rafal Jakiela
    Gregory J. Salamo
    Alexander E. Belyaev
    Nanoscale Research Letters, 2017, 12
  • [46] Doping efficiency in n-type InP nanowires
    Besteiro, Lucas V.
    Tortajada, Luis
    Souto, J.
    Gallego, L. J.
    Chelikowsky, James R.
    Alemany, M. M. G.
    PHYSICAL REVIEW B, 2013, 88 (11):
  • [47] PHOTOCONDUCTIVITY IN N-TYPE INP-FE
    CHADRAABAL, S
    POPOV, AS
    KUSHEV, DB
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 77 (02): : 709 - 714
  • [48] Negative magnetoresistance in metallic n-type InP
    El kaaouachi, A
    Moudden, A
    Nafidi, A
    Biskupski, G
    PHYSICA B, 2001, 304 (1-4): : 377 - 381
  • [49] ANOMALOUS ELECTRICAL BEHAVIOR OF N-TYPE INP
    BENZAQUEN, M
    BEAUDOIN, M
    WALSH, D
    PUETZ, N
    PHYSICAL REVIEW B, 1988, 38 (11): : 7824 - 7827
  • [50] AuGePt ohmic contact to n-type InP
    Huang, WC
    Lee, CL
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (12) : 9200 - 9205