BIPOLAR-TRANSISTOR MODELING OF AVALANCHE GENERATION FOR COMPUTER CIRCUIT SIMULATION

被引：42

作者：

DUTTON, RW ^{[1
]}

机构：

[1] BELL TEL LABS INC, HOLMDEL, NJ USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1975年 / ED22卷 / 06期

关键词：

D O I：

10.1109/T-ED.1975.18132

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：334 / 338

页数：5

共 50 条

[31] A HYBRID TECHNIQUE FOR THE SOLUTION OF BIPOLAR-TRANSISTOR STRUCTURE SIMULATION PROBLEM
KUCHERNYUK, PV
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOELEKTRONIKA, 1991, 34 (06): : 86 - 88
[32] PARITY GENERATOR CIRCUIT USING A MULTISTATE RESONANT TUNNELLING BIPOLAR-TRANSISTOR
SEN, S
CAPASSO, F
CHO, AY
SIVCO, DL
ELECTRONICS LETTERS, 1988, 24 (24) : 1506 - 1507
[33] MODELING OF TEMPERATURE-DEPENDENT TRANSPORT PARAMETERS FOR LOW-TEMPERATURE BIPOLAR-TRANSISTOR SIMULATION
CHRZANOWSKAJESKE, M
JAEGER, RC
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C426 - C426
[34] MODELING OF THE HEATING OF THE ELECTRON-PLASMA IN A HETEROJUNCTION BIPOLAR-TRANSISTOR
ABACHEV, MK
BUTAKOVA, NG
ZUBOV, AV
ORLIKOVSKII, AA
SOVIET MICROELECTRONICS, 1986, 15 (05): : 222 - 225
[35] HIGHER-ORDER MODELING OF THE DIFFUSION DYNAMICS IN A BIPOLAR-TRANSISTOR
LEHTINEN, K
SIPILA, M
PORRA, V
INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, 1991, 19 (02) : 125 - 143
[36] CURRENT GAIN OF THE BIPOLAR-TRANSISTOR
WU, CY
JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 5030 - 5037
[37] A TUNNELING EMITTER BIPOLAR-TRANSISTOR
XU, JM
SHUR, M
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (07) : 416 - 418
[38] QUASI-3-DIMENSIONAL MODELING OF BIPOLAR-TRANSISTOR CHARACTERISTICS
SADOVNIKOV, A
ROULSTON, DJ
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1993, 12 (11) : 1742 - 1748
[39] THE APPLICATION OF THE ETD BIPOLAR-TRANSISTOR
WUIDART, L
ELECTRONIC ENGINEERING, 1988, 60 (733): : 43 - &
[40] EARLY VOLTAGE OF A BIPOLAR-TRANSISTOR
MALONE, FD
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (02) : 167 - 168

← 1 2 3 4 5 →