Thermal Perturbation in Dye-Sensitized Solar Cell

被引:0
|
作者
Ahanger, Bilal Ahmad [1 ]
Singh, R. K. Brojen [2 ]
Ansari, Z. A. [1 ]
机构
[1] Jamia Millia Islamia, Ctr Interdisciplinary Res Basic Sci, New Delhi 110025, India
[2] Jawaharlal Nehru Univ, Sch Computat & Integrat Sci, New Delhi 110067, India
关键词
Thermal Perturbation; Diffusion Length; Electron Lifetime; Recombination Rate; Non-Linear Recombination;
D O I
10.1166/mat.2014.1187
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The impact of thermal activation in electron transport which incorporates as a perturbed term in recombination rate of electrons in Dye-sensitized solar cell (DSSC) is studied theoretically. This perturb term itself is non-linear and allows to increase the electron conduction significantly. The induced electron density due to this thermal activation is found to be dependent on initial conduction electron density and increases as the non-linear parameter beta increases upto certain value which is dependent on the parameter R (ratio of electron generation to trapped electron densities), and then decreases as beta increases. The electron lifetime and diffusion length are found to be functions of single parameter V/T which have two distinct and contrast behaviours with beta in electron transport.
引用
收藏
页码:368 / 372
页数:5
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