ELECTRON-MICROSCOPE STUDIES OF INXGA1-XAS/GAAS/SI GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：0
|
作者：
KAMEI, K
STOBBS, WM
FUJITA, K
机构：
[1] UNIV CAMBRIDGE,DEPT MAT SCI & MET,CAMBRIDGE CB2 3QZ,ENGLAND
[2] ATR,OPT & RADIO COMMUN RES LABS,KYOTO 61902,JAPAN
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1995年 / 24卷 / 12期
关键词：
GAAS/SI HETEROEPITAXY; INGAAS; METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); TRANSMISSION ELECTRON MICROSCOPY (TEM);
D O I：
10.1007/BF02653026
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The microstructure of InxGa1-xAs/GaAs (5nm/5 nm, x=0 to 1.0), as grown by a metalorganic chemical vapor deposition two-step growth technique on Si(100) at 450 degree C, and subsequently annealed at 750 degree C, is investigated using plan-view and cross-sectional transmission electron microscopy. The variations in resultant island morphology and strain as a function of the In content were examined through the comparison of the misfit dislocation arrays and moires observed. The results are discussed in relation to the ways in which the island relaxation process changes for high In content.
引用
收藏
页码：2025 / 2031
页数：7
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