EFFECT OF INTERDIFFUSION ON DISLOCATION GENERATION IN EPITAXIAL LAYERS ON CDTE, (CD,ZN)TE AND CD(TE,SE) SUBSTRATES

被引：2
|
作者：
UTKE, I
PARTHIER, L
SCHENK, M
机构：
[1] Institute of Crystallography and Materials Science, Humboldt University of Berlin, O- 1040 Berlin
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 16卷 / 1-3期
关键词：
D O I：
10.1016/0921-5107(93)90043-M
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Diffusion modifies the interfacial strain field induced by the composition difference and temperature changes. The strain field is estimated theoretically for liquid-phase epitaxial-grown (Hg,Cd)Te layers on different substrates. The effect on the generation of misfit dislocations is compared with etch pit density profiles.
引用
收藏
页码：199 / 201
页数：3
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