AUGER GENERATION SUPPRESSION IN NARROW-GAP SEMICONDUCTORS USING THE MAGNETOCONCENTRATION EFFECT

被引：8
|
作者：
DJURIC, Z [1 ]
JAKSIC, Z [1 ]
VUJANIC, A [1 ]
PIOTROWSKI, J [1 ]
机构：
[1] VIGO LTD, PL-00908 WARSAW 49, POLAND
来源：
JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 11期
关键词：
D O I：
10.1063/1.350505
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A method is presented for the Auger generation suppression in narrow-gap semiconductors using the magnetoconcentration effect for the case when all the generation-recombination mechanisms (Auger, radiative, and Shockley-Read) are taken into account. A numerical solution is given for the kinetic equation determining carrier concentration distribution in a thin semiconductor slab placed in an electric and a magnetic field. The results of the numerical calculation show that the Auger generation suppression becomes very efficient when the concentration of Shockley-Read recombination centers is small enough.
引用
收藏
页码：5706 / 5708
页数：3
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