AUGER GENERATION SUPPRESSION IN NARROW-GAP SEMICONDUCTORS USING THE MAGNETOCONCENTRATION EFFECT

被引：8

作者：

DJURIC, Z ^{[1
]}

JAKSIC, Z ^{[1
]}

VUJANIC, A ^{[1
]}

PIOTROWSKI, J ^{[1
]}

机构：

[1] VIGO LTD, PL-00908 WARSAW 49, POLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 11期

关键词：

D O I：

10.1063/1.350505

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method is presented for the Auger generation suppression in narrow-gap semiconductors using the magnetoconcentration effect for the case when all the generation-recombination mechanisms (Auger, radiative, and Shockley-Read) are taken into account. A numerical solution is given for the kinetic equation determining carrier concentration distribution in a thin semiconductor slab placed in an electric and a magnetic field. The results of the numerical calculation show that the Auger generation suppression becomes very efficient when the concentration of Shockley-Read recombination centers is small enough.

引用

页码：5706 / 5708

页数：3

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