共 50 条
- [1] DETERMINATION OF DENSITY OF LOCALIZED STATES IN AMORPHOUS SILICON ALLOYS FROM THE LOW FIELD CONDUCTANCE OF THIN N-I-N DIODES.1600, (59):Shur, MichaelHack, Michael
- [2] THE PHOTOVOLTAGES OF AMORPHOUS-SILICON N-I-N AND P-I-P STRUCTURESJOURNAL OF PHYSICS D-APPLIED PHYSICS, 1983, 16 (08) : L153 - L156PICKIN, WMUHL, S
- [3] INTERPRETATION OF TRANSIENT CURRENTS IN AMORPHOUS-SILICON HYDRIDE P-I-N AND N-I-N DEVICESIEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (12) : 2785 - 2788SHAPIRO, FRBARYAM, YSILVER, M
- [4] CURRENT-STRESS INDUCED ASYMMETRY IN HYDROGENATED AMORPHOUS-SILICON N-I-N DEVICESJOURNAL OF APPLIED PHYSICS, 1992, 71 (03) : 1290 - 1297NIEUWESTEEG, KJBMBOOGAARD, JOVERSLUIZEN, GPOWELL, MJ
- [5] ELECTROLUMINESCENCE FROM HYDROGENATED AMORPHOUS-SILICON P-I-N-DIODESJOURNAL OF NON-CRYSTALLINE SOLIDS, 1995, 190 (1-2) : 74 - 84HAN, DXWANG, KD
- [6] AMORPHOUS-SILICON P-I-N-I-P AND N-I-P-I-N DIODESAPPLIED PHYSICS LETTERS, 1986, 48 (15) : 1006 - 1008DRESNER, J
- [7] PHOTOINDUCED EFFECTS IN HYDROGENATED AMORPHOUS-SILICON P-I-N-DIODESSOLID-STATE ELECTRONICS, 1982, 25 (10) : 1059 - 1062SAKATA, IHAYASHI, YYAMANAKA, MKARASAWA, H
- [8] HIGH REVERSE VOLTAGE AMORPHOUS-SILICON P-I-N-DIODESJOURNAL OF APPLIED PHYSICS, 1990, 68 (03) : 1340 - 1344POCHET, TDUBEAU, JEQUER, BKARAR, AHAMEL, LA
- [9] FIELD-EFFECT CONDUCTANCE IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS WITH A DEFECT POOL DENSITY-OF-STATESJOURNAL OF APPLIED PHYSICS, 1993, 74 (11) : 6655 - 6666DEANE, SCPOWELL, MJ
- [10] DETERMINATION OF THE DENSITY OF STATES IN AMORPHOUS-SILICON FROM THERMOSTIMULATED CONDUCTIVITY MEASUREMENTSJOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 711 - 714LANDWEER, GSCHREUTELKAMP, RSIMONS, HBEZEMER, JVANDERWEG, WF