SURFACE-DEFECTS ON MBE-GROWN GAAS

被引:33
|
作者
SUZUKI, Y
SEKI, M
HORIKOSHI, Y
OKAMOTO, H
机构
关键词
D O I
10.1143/JJAP.23.164
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:164 / 167
页数:4
相关论文
共 50 条
  • [41] MBE-GROWN GAAS-LAYERS BY CONTROLLING ARSENIC PRESSURE
    WANG, YH
    LIU, WC
    CHANG, CY
    LIAO, SA
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) : C404 - C404
  • [42] Dislocations in MBE-grown ZnSe/GaAs(001) epitaxial layers
    Vidal, MA
    Constantino, ME
    Salazar-Hernández, B
    Navarro-Contreras, H
    López-López, M
    Hernández-Calderón, I
    Yonezu, H
    [J]. DEFECT AND DIFFUSION FORUM, 1999, 174 : 31 - 44
  • [43] MBE-grown GaAs:Si/GaAs:Be tunnel diodes for multijunction solar cells
    Klimko, G. V.
    Komissarova, T. A.
    Sorokin, S. V.
    Kontrosh, E. V.
    Lebedeva, N. M.
    Usikova, A. A.
    Il'inskaya, N. D.
    Kalinovskii, V. S.
    Ivanov, S. V.
    [J]. TECHNICAL PHYSICS LETTERS, 2015, 41 (09) : 905 - 908
  • [44] MBE-grown GaAs:Si/GaAs:Be tunnel diodes for multijunction solar cells
    G. V. Klimko
    T. A. Komissarova
    S. V. Sorokin
    E. V. Kontrosh
    N. M. Lebedeva
    A. A. Usikova
    N. D. Il’inskaya
    V. S. Kalinovskii
    S. V. Ivanov
    [J]. Technical Physics Letters, 2015, 41 : 905 - 908
  • [45] Critical thickness investigation of MBE-grown GaInAs/GaAs and GaAsSb/GaAs heterostructures
    Maros, Aymeric
    Faleev, Nikolai
    King, Richard R.
    Honsberg, Christiana B.
    Convey, Diana
    Xie, Hongen
    Ponce, Fernando A.
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2016, 34 (02):
  • [46] DIFFERENTIAL PHOTOREFLECTANCE AND RAMAN STUDIES OF MBE-GROWN GAAS/SI/GAAS STRUCTURES
    MELENDEZLIRA, M
    JIMENEZSANDOVAL, S
    LOPEZLOPEZ, M
    HERNANDEZCALDERON, I
    YAMAUCHI, Y
    KAWAI, T
    PAK, K
    YONEZU, H
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 : A357 - A358
  • [47] EVALUATION OF NUCLEATION AND DEFECTS IN MBE-GROWN STRAINED INAS/GAAS QUANTUM STRUCTURES ON VARIOUSLY ORIENTED SUBSTRATES
    SUZUKI, A
    LEE, J
    KUDO, K
    MAKITA, Y
    YAMADA, A
    TANAKA, K
    [J]. APPLIED SURFACE SCIENCE, 1992, 60-1 : 631 - 636
  • [48] SLOPE ANGLE INFLUENCE ON SILICON DOPING IN ALGAAS/GAAS MBE-GROWN ON STEPPED SURFACE OF (100) GAAS SUBSTRATE
    NOBUHARA, H
    WADA, O
    FUJII, T
    [J]. ELECTRONICS LETTERS, 1987, 23 (01) : 35 - 36
  • [49] TYPES OF OVAL DEFECTS ON GAAS GROWN BY MBE
    LEE, CT
    CHOU, YC
    [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 91 (1-2) : 169 - 172
  • [50] Surface acceptor states in MBE-grown CdTe layers
    Wichrowska, Karolina
    Wosinski, Tadeusz
    Tkaczyk, Zbigniew
    Kolkovsky, Valery
    Karczewski, Grzegorz
    [J]. JOURNAL OF APPLIED PHYSICS, 2018, 123 (16)