ION-BEAM DOSIMETRY BY RUTHERFORD BACKSCATTERING WITH CONTINUOUS ROTATION OF THE SAMPLE

被引:2
|
作者
HEMMENT, PLF
MAYDELLONDRUSZ, EA
STEPHENS, KG
机构
来源
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 218卷 / 1-3期
关键词
D O I
10.1016/0167-5087(83)90962-6
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:103 / 106
页数:4
相关论文
共 50 条
  • [21] Rutherford backscattering studies of ion implanted semiconductors
    Nipoti, R
    Servidori, M
    EFFECT OF DISORDER AND DEFECTS IN ION-IMPLANTED SEMICONDUCTORS : ELECTRICAL AND PHYSICOCHEMICAL CHARACTERIZATION, 1997, 45 : 239 - 260
  • [22] Formation of ultrathin continuous films by ion-beam treatment
    Maishev, Yu.P.
    Shevchuk, S.L.
    Kudrya, V.P.
    Applied Physics, 2018, 2018-January (04): : 79 - 83
  • [23] THRESHOLDS OF NON-RUTHERFORD NUCLEAR CROSS-SECTIONS FOR ION-BEAM ANALYSIS
    BOZOIAN, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 56-7 (pt 2): : 740 - 743
  • [24] ION-BEAM DEPOSITION AND INSITU ION-BEAM ANALYSIS
    ALBAYATI, AH
    ORRMANROSSITER, KG
    ARMOUR, DG
    VANDENBERG, JA
    DONNELLY, SE
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 63 (1-2): : 109 - 119
  • [25] He ion beam density effect on damage induced in SiC during Rutherford backscattering measurement
    Khánh, NQ
    Zolnai, Z
    Lohner, T
    Tóth, L
    Dobos, L
    Gyulai, J
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 161 : 424 - 428
  • [26] Modeling of ion beam induced damage in Si during channeling Rutherford backscattering spectrometry analysis
    Hua, Wei
    Yao, Shu-De
    Wijesundera, Dharshana
    Wang, Xue-Mei
    Chu, Wei-Kan
    Martin, Michael
    Carter, Jesse
    Hollander, Mark
    Shao, Lin
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2009, 267 (05): : 813 - 816
  • [27] ANALYSIS OF MICROSTRUCTURED SAMPLES BY FOCUSED ION-BEAM SAMPLE PREPARATION
    FREY, L
    ERGELE, W
    FALTER, T
    GONG, L
    RYSSEL, H
    MICROELECTRONIC ENGINEERING, 1993, 21 (1-4) : 375 - 378
  • [28] A LARGE SAMPLE GONIOMETER FOR USE IN RUTHERFORD BACKSCATTERING CHANNELING MEASUREMENTS
    SCOTT, MD
    KENNY, MJ
    JANKY, S
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 12 (01): : 181 - 184
  • [29] NON-RUTHERFORD HE-4 CROSS-SECTIONS FOR ION-BEAM ANALYSIS
    LEAVITT, JA
    MCINTYRE, LC
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 56-7 : 734 - 739
  • [30] PRECISION-MEASUREMENT OF ENERGY OF ACCELERATED CONTINUOUS ION-BEAM
    OSTROUMOV, PN
    PETRONEVICH, SA
    FESHCHENKO, AV
    SHARAMENTOV, SI
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1990, 33 (02) : 287 - 290