POINT-DEFECTS AND PRODUCTION MECHANISMS IN SIO2

被引：0
|
作者：
FOWLER, WB
机构：
来源：
SEMICONDUCTORS AND INSULATORS | 1983年 / 5卷 / 3-4期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：583 / 598
页数：16
相关论文
共 50 条
  • [31] ROLE OF POINT-DEFECTS IN DIELECTRIC-BREAKDOWN OF SIO2 FORMED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF TETRAETHOXYSILANE
    ISHII, K
    ISSHIKI, D
    OHKI, Y
    NISHIKAWA, H
    TAKIYAMA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (01): : 205 - 211
  • [32] POINT-DEFECTS AND DIFFUSION MECHANISMS PERTINENT TO THE GA SUBLATTICE OF GAAS
    TAN, TY
    MATERIALS CHEMISTRY AND PHYSICS, 1995, 40 (04) : 245 - 252
  • [33] Point-defects in irradiated UO2
    Olander, D.
    JOURNAL OF NUCLEAR MATERIALS, 2010, 399 (2-3) : 236 - 239
  • [34] INTERACTION MECHANISMS BETWEEN DISLOCATIONS, IMMOBILE POINT-DEFECTS AND MOBILE POINT-DEFECTS IN PURE ALUMINUM NEAR THE ROOM-TEMPERATURE RANGE
    GREMAUD, G
    HO, LP
    BENOIT, W
    JOURNAL DE PHYSIQUE, 1983, 44 (NC-9): : 581 - 586
  • [35] POINT-DEFECTS IN TITANIUM (M2)
    JOHNSON, RA
    BEELER, JR
    JOURNAL OF METALS, 1980, 32 (08): : 15 - 15
  • [36] AXIAL DECHANNELING .2. POINT-DEFECTS
    GARTNER, K
    HEHL, K
    SCHLOTZHAUER, G
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 4 (01): : 55 - 62
  • [37] POINT-DEFECTS AND NONSTOICHIOMETRY IN HGSE2
    KUMAZAKI, K
    MATSUSHIMA, E
    ODAJIMA, A
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 37 (02): : 579 - 589
  • [38] Ab initio theory of optical transitions of point defects in SiO2
    Pacchioni, G
    Ierano, G
    PHYSICAL REVIEW B, 1998, 57 (02): : 818 - 832
  • [39] Ab initio cluster calculations on point defects in amorphous SiO2
    Uchino, T
    CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE, 2001, 5 (06): : 517 - 523
  • [40] Photoluminescence study on point defects in SIMOX buried SiO2 film
    Seol, KS
    Ieki, A
    Ohki, Y
    Nishikawa, H
    Tachimori, M
    ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 1909 - 1913
12345