OXIDATION-INDUCED POINT-DEFECTS IN SILICON

被引：72
|
作者：
ANTONIADIS, DA
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 05期
关键词：
D O I：
10.1149/1.2124034
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：1093 / 1097
页数：5
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