SIMULATION OF SECONDARY ELECTRON TRANSPORT IN THIN METAL AND FULLERITE FILMS

被引：0
|
作者：
Petrenko, E. O. [1 ]
Makarets, M. V. [2 ]
Mikoushkin, V. M. [3 ]
Pugach, V. M. [1 ]
机构：
[1] NAS Ukraine, Kiev Inst Nucl Res, Nauky Av 47, Kiev, Ukraine
[2] Taras Shevchenko Natl Univ Kyiv, Phys Dept, UA-03022 Kiev, Ukraine
[3] Ioffe Inst, St Petersburg 194021, Russia
来源：
NANOSYSTEMS-PHYSICS CHEMISTRY MATHEMATICS | 2014年 / 5卷 / 01期
关键词：
Fullerite; Films; Electron beams; Electronic properties;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Excitation processes and transport of recoiled and secondary electrons generated in fullerite and metal films under photons and electron irradiation were studied by computer simulation. Studied processes resulting in polymerization of fullerite were considered as the basic ones in formation of a pixel in electron nanolithography with fullerite film as an electron-beam resist. Reliability of the computer model and the important role of secondary electrons in the process of pixel formation were confirmed by comparison of the sizes of the calculated secondary electron swarm and the experimental cluster-pixel obtained previously. The photoelectron yield dependence on the incident photon's energy was also obtained with the same computer model for metal foils which can be used as a radiation strip-detector.
引用
收藏
页码：81 / 85
页数：5
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