CONTROL OF SILICON DIOXIDE PROPERTIES BY RF SPUTTERING

被引：4
|
作者：
LEE, MK
CHANG, CY
TZENG, JS
SU, YK
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 03期
关键词：
D O I：
10.1149/1.2119776
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：658 / 659
页数：2
相关论文
共 50 条
  • [1] Silicon dioxide films by RF sputtering for microelectronic and MEMS applications
    Bhatt, Vivekanand
    Chandra, Sudhir
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2007, 17 (05) : 1066 - 1077
  • [2] Properties of silicon doped silicon dioxide thin films deposited by Co-sputtering of silicon and silicon dioxide
    Sandhu, A
    Show, Y
    Katano, T
    Iwase, M
    Izumi, T
    Yabe, T
    Nozaki, S
    Morisaki, H
    APPLIED SURFACE SCIENCE, 1997, 117 : 634 - 637
  • [3] Athermal Silicon Ring Modulators Clad with Titanium Dioxide by RF Magnetron Sputtering
    Djordjevic, Stevan S.
    Shang, Kuanping
    Guan, Binbin
    Cheung, Stanley T. S.
    Qin, Chuan
    Liao, Ling
    Basak, Juthika
    Liu, Hai-Feng
    Yoo, S. J. B.
    2013 IEEE OPTICAL INTERCONNECTS CONFERENCE, 2013, : 56 - +
  • [4] ELECTRICAL PROPERTIES OF RF SPUTTERED SILICON DIOXIDE FILMS
    KUSHNIR, AJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (08) : C257 - &
  • [5] CONTROL OF FILM PROPERTIES BY RF-SPUTTERING TECHNIQUES
    VOSSEN, JL
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (05): : S12 - +
  • [6] Properties of chemically etched porous polycrystalline silicon deposited by rf sputtering
    Huang, WN
    Tong, KY
    Chan, PW
    1996 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, 1996, : 21 - 24
  • [7] Structural and electrical properties of cerium dioxide films grown by RF magnetron sputtering
    Tsai, WC
    Tseng, TY
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1997, 8 (05) : 313 - 320
  • [8] Structural and electrical properties of cerium dioxide films grown by RF magnetron sputtering
    WEN-CHOU TSAI
    TSEUNG-YUEN TSENG
    Journal of Materials Science: Materials in Electronics, 1997, 8 : 313 - 320
  • [9] SPUTTERING OF SILICON DIOXIDE NEAR THRESHOLD
    TODOROV, SS
    FOSSUM, ER
    APPLIED PHYSICS LETTERS, 1988, 52 (05) : 365 - 367
  • [10] Study on Properties of Silicon Oxycarbide Thin Films Prepared by RF Magnetron Sputtering
    Chen, Tao
    Dong, Maojin
    Wang, Jizhou
    Zhang, Ling
    Li, Chen
    PROCEEDINGS OF THE 2ND INTERNATIONAL CONFERENCE ON ELECTRONIC & MECHANICAL ENGINEERING AND INFORMATION TECHNOLOGY (EMEIT-2012), 2012, 23
12345