EFFECT OF THE BACK-SURFACE FIELD ON THE OPEN-CIRCUIT VOLTAGES OF P+-N-N+ AND N+-P-P+ SILICON SOLAR-CELLS

被引:24
|
作者
SINGH, SN
JAIN, GC
机构
来源
SOLAR CELLS | 1982年 / 5卷 / 02期
关键词
D O I
10.1016/0379-6787(82)90024-2
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
引用
收藏
页码:143 / 172
页数:30
相关论文
共 50 条
  • [41] Review on different front surface modification of both n+-p-p+ and p+-n-n+C- Si solar cell
    Dasgupta, Kaustuv
    Ray, Soma
    Mondal, Anup
    Gangopadhyay, Utpal
    MATERIALS TODAY-PROCEEDINGS, 2017, 4 (14) : 12698 - 12707
  • [42] Comparative Analysis of Si PERT Cells with n+-p-p+ and n+-n-p+ Structures
    Kreinin, Lev
    Eisenberg, Ygal
    Arumughan, Jayaprasad
    Peter, Christoph
    Eisenberg, Naftali
    2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC), 2018, : 1025 - 1028
  • [43] Effects of high temperature annealing of aluminum at the back of n+-p-p+ silicon solar cells upon their spectral and electrical characteristics
    Morales-Acevedo, A
    Santana, G
    Martel, A
    Hernández, L
    SOLID-STATE ELECTRONICS, 1999, 43 (11) : 2075 - 2079
  • [44] CURRENT FILAMENT IN SILICON P+-N-N+ DIODES
    SHCHERBINA, LV
    TORCHINSKAYA, TV
    UKRAINSKII FIZICHESKII ZHURNAL, 1983, 28 (02): : 268 - 271
  • [45] Study of C-V characteristics in thin n+-p-p+ silicon solar cells and induced junction n-p-p+ cell structures
    Kumar, Sanjai
    Sareen, Vikash
    Batra, Neha
    Singh, P. K.
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2010, 94 (09) : 1469 - 1472
  • [46] Microstructurally engineered p-layers for obtaining high open-circuit voltages in a-Si:H n-i-p solar cells
    Koval, RJ
    Pearce, JM
    Chen, C
    Ferreira, GM
    Ferlauto, AS
    Collins, RW
    Wronski, CR
    CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002, 2002, : 1090 - 1093
  • [47] ON THE DETERMINATION OF MINORITY-CARRIER DIFFUSION LENGTH IN THE BASE REGION OF N+-P-P+ SILICON SOLAR-CELLS USING PHOTORESPONSE METHODS
    BASU, PK
    SINGH, SN
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1994, 33 (03) : 317 - 329
  • [48] INSTABILITY OF CURRENT IN SILICON P+-N-N+ STRUCTURES IN A MAGNETIC-FIELD
    AMIRKHANOV, KI
    BASHIROV, RI
    ISAEV, MR
    ALIEV, BG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (11): : 1429 - 1430
  • [49] P-I-N + N-I-P BASIS SOLAR-CELLS
    UCHIDA, Y
    JAPAN ANNUAL REVIEWS IN ELECTRONICS COMPUTERS & TELECOMMUNICATIONS, 1984, 16 : 180 - 199
  • [50] DIFFUSION LENGTH DETERMINATION IN N+-P-P+ STRUCTURE BASED SILICON SOLAR-CELLS FROM THE INTENSITY DEPENDENCE OF THE SHORT-CIRCUIT CURRENT FOR ILLUMINATION FROM THE P+ SIDE
    JAIN, GC
    SINGH, SN
    KOTNALA, RK
    SOLAR CELLS, 1983, 8 (03): : 239 - 248