THEORETICAL CALCULATIONS OF THE SCANNING-TUNNELING-MICROSCOPY IMAGES OF THE SI(111)-SQUARE-ROOT-3X-SQUARE-ROOT-3-AG SURFACE

被引:102
|
作者
WATANABE, S
AONO, M
TSUKADA, M
机构
[1] INST PHYS & CHEM RES, SURFACE & INTERFACE LAB, WAKO, SAITAMA 351, JAPAN
[2] UNIV TOKYO, DEPT PHYS, BUNKYO KU, TOKYO 113, JAPAN
来源
PHYSICAL REVIEW B | 1991年 / 44卷 / 15期
关键词
D O I
10.1103/PhysRevB.44.8330
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The scanning-tunneling-microscopy (STM) images of the Si(111) square-root 3 X square-root 3-Ag surface have been calculated from first principles for a structural model of the surface recently proposed, or the modified honeycomb-chained-trimer model, which is consistent with reported photoemission and inverse-photoemission spectra. The results show excellent agreement with reported STM images. Each bright spot corresponding to a protrusion in the reported STM images represents neither Ag nor Si atoms but rather corresponds to the center of each surface Ag trimer.
引用
收藏
页码:8330 / 8333
页数:4
相关论文
共 50 条
  • [21] 1ST PRINCIPLES TOTAL ENERGY CALCULATIONS FOR THE HONEYCOMB MODEL OF THE SQUARE-ROOT-3 X SQUARE-ROOT-3 AG/SI(111) SURFACE
    CHAN, CT
    HO, KM
    SURFACE SCIENCE, 1989, 217 (1-2) : 403 - 412
  • [22] SCANNING TUNNELING MICROSCOPY OF ROOT-3 X ROOT-3-BI RECONSTRUCTION ON THE SI(111) SURFACE
    PARK, C
    BAKHTIZIN, RZ
    HASHIZUME, T
    SAKURAI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (2B): : L290 - L293
  • [23] THEORETICAL CALCULATIONS OF STM IMAGES OF THE SI(111)ROOT-3X-ROOT-3-AG AND SI(III))ROOT-3X-ROOT-3-SB SURFACES
    WATANABE, S
    AONO, M
    TSUKADA, M
    SURFACE SCIENCE, 1993, 287 : 1036 - 1040
  • [24] ON THE RESTRUCTURED LAYER OF THE SI(111)ROOT-3X-ROOT-3-AG STRUCTURE STUDIES BY SCANNING TUNNELING MICROSCOPY
    SHIBATA, A
    KIMURA, Y
    TAKAYANAGI, K
    SURFACE SCIENCE, 1992, 275 (03) : L697 - L701
  • [25] STUDY ON THE SI(111) SQUARE-ROOT-3 X SQUARE-ROOT-3-AG SURFACE-STRUCTURE BY X-RAY-DIFFRACTION
    TAKAHASHI, T
    NAKATANI, S
    OKAMOTO, N
    ISHIKAWA, T
    KIKUTA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (05): : L753 - L755
  • [26] HYDROGEN-INDUCED AG CLUSTER FORMATION ON THE SI(111) ROOT-3X-ROOT-3 (R30-DEGREES)-AG SURFACE OBSERVED BY SCANNING-TUNNELING-MICROSCOPY
    OHNISHI, H
    YAMAMOTO, Y
    KATAYAMA, I
    OHBA, Y
    OURA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (8A): : L1106 - L1109
  • [27] GEOMETRIC STRUCTURE OF THE SI(111)SQUARE-ROOT-3SQUARE-ROOT-3-GA SURFACE
    KAWAZU, A
    SAKAMA, H
    PHYSICAL REVIEW B, 1988, 37 (05): : 2704 - 2706
  • [28] SURFACE-STATES ON SI(111) SQUARE-ROOT3 X SQUARE-ROOT3-IN - EXPERIMENT AND THEORY
    NICHOLLS, JM
    MARTENSSON, P
    HANSSON, GV
    NORTHRUP, JE
    PHYSICAL REVIEW B, 1985, 32 (02): : 1333 - 1335
  • [29] Scanning tunneling microscopy study of Si growth on a Si(111)root 3x root 3-B surface
    Zotov, AV
    Kulakov, MA
    Bullemer, B
    Eisele, I
    PHYSICAL REVIEW B, 1996, 53 (19): : 12902 - 12906
  • [30] ELECTRONIC STATES DUE TO SURFACE DOPING - SI(111)-SQUARE-ROOT-3X-SQUARE-ROOT-3B
    KAXIRAS, E
    PANDEY, KC
    HIMPSEL, FJ
    TROMP, RM
    PHYSICAL REVIEW B, 1990, 41 (02): : 1262 - 1265