PROPERTIES OF GAINAS(P)/INP MULTILAYERS AND SUPERLATTICES GROWN BY MOVPE AT ATMOSPHERIC-PRESSURE

被引:10
|
作者
ANDRE, JP
PATILLON, JN
SCHILLER, C
LESIOURD, JY
VLAEMINCK, O
MALHOUROUX, N
机构
[1] Laboratoires d'Electronique Philips 22 venue Descartes
关键词
D O I
10.1016/0022-0248(91)90192-8
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
By using AP MOVPE, lattice matched GaInAs/InP multilayers and superlattices with up to 80 periods have been successfully obtained with thickness fluctuations over the superlattice of less than +/- 2.5% on a 2 inch wafer. Excellent X-ray diffraction spectra have been recorded on the superlattices, exhibiting up to 7 harmonic peak satellites. A 4 K strong photoluminescence (PI) intensity has been detected on these structures, the luminescence linewidth being as low as 6 meV for 20-period superlattices, i.e., quite similar to that obtained with a single quantum well (QW). Finally, the excellent quality of these structures has been confirmed by their performances in passive and active guided optics.
引用
收藏
页码:292 / 297
页数:6
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