PHASE-TRANSFORMATIONS IN ION-MIXED METASTABLE (GASB)1-X(GE2)X SEMICONDUCTING ALLOYS

被引：19
|
作者：
CADIEN, KC
MUDDLE, BC
GREENE, JE
机构：
[1] UNIV ILLINOIS,DEPT MECH ENGN,URBANA,IL 61801
[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
[3] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
来源：
JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 12期
关键词：
D O I：
10.1063/1.333036
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4177 / 4186
页数：10
相关论文
共 50 条
  • [21] A PSEUDOPOTENTIAL APPROACH TO MIXING ENTHALPIES OF DISORDERED (GAAS)1-X(GE2)X
    ITO, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07): : L1177 - L1179
  • [22] The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1− x(ZnSe)x, Ge-(Ge2)1−x(ZnSe)x, GaP-(Ge2)1−x (ZnSe)x, and Si-(Ge2)1−x(ZnSe)x
    A. S. Saidov
    É. A. Koshchanov
    A. Sh. Razzakov
    Technical Physics Letters, 1998, 24 : 47 - 48
  • [23] EFFECTS OF A ZINCBLENDE DIAMOND ORDER-DISORDER TRANSITION ON THE CRYSTAL, ELECTRONIC, AND VIBRATIONAL-STRUCTURES OF METASTABLE (GAAS)1-X(GE2)X ALLOYS
    NEWMAN, KE
    DOW, JD
    BUNKER, BA
    ABELS, LL
    RACCAH, PM
    UGUR, S
    XUE, DZ
    KOBAYASHI, A
    PHYSICAL REVIEW B, 1989, 39 (01): : 657 - 662
  • [24] Liquid phase epitaxy photoluminescence and photoelectrical properties of variband (Ge2)1-x(ZnSe)x layers
    Saidov, MS
    Saidov, AS
    Razzakov, AS
    PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II, 2000, 3975 : 1424 - 1427
  • [25] ENERGY BAND STRUCTURE OF METASTABLE SEMICONDUCTOR (GaAs)1 - x (Ge2)x.
    Xu, Zhizhong
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1987, 8 (04): : 356 - 361
  • [26] ELECTROPHYSICAL CHARACTERISTICS OF METASTABLE (GE2)X(GAAS)1-X SOLID-SOLUTIONS AND THE INFLUENCE OF HEAT-TREATMENT ON THESE CHARACTERISTICS
    VARTANYAN, RS
    MASHEVSKII, AG
    SINITSYN, MA
    ULIN, VP
    YAVICH, BS
    YAKOVENKO, AA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (08): : 899 - 903
  • [27] GROWTH OF (GAAS)1-X(GE2)X BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    VERNON, SM
    SANFACON, MM
    AHRENKIEL, RK
    JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (02) : 147 - 151
  • [28] Ge-related faceting and segregation during the growth of metastable (GaAs)1-x(Ge2)x alloy layers by metal-organic vapor-phase epitaxy
    Norman, AG
    Olson, JM
    Geisz, JF
    Moutinho, HR
    Mason, A
    Al-Jassim, MM
    Vernon, SM
    APPLIED PHYSICS LETTERS, 1999, 74 (10) : 1382 - 1384
  • [29] Phase transformations and the nature of the semiconductor-to-metal transition in bulk a-GaSb and a-(Ge-2)(1-x)(GaSb)(x) semiconductors under high pressure
    Brazhkin, VV
    Lyapin, AG
    Khvostantsev, LG
    Sidorov, VA
    Tsiok, OB
    Bayliss, SC
    Sapelkin, AV
    Clark, SM
    PHYSICAL REVIEW B, 1996, 54 (03): : 1808 - 1818
  • [30] STUDY OF INTERBAND TRANSITION ENERGY E1 IN METASTABLE ALLOYS (GaAs)1 - x(Ge2)x BY SPECTROSCOPIC ELLIPSOMETRY.
    Xue Dazhong
    Raccah, Paul M.
    Abels, L.L.
    Hongwai Yanjiu, A-ji/Chinese Journal of Infrared Research A, 1987, 6 (06): : 419 - 424
12345