CHARACTERIZATION OF FUNCTIONAL-RELATIONSHIP BETWEEN TEMPERATURE AND MICROELECTRONIC RELIABILITY

被引:27
|
作者
LALL, P [1 ]
PECHT, M [1 ]
HAKIM, EB [1 ]
机构
[1] USA, RES LAB,ELECTR & POWER SOURCES DIRECTORATE, COMPONENT RELIABIL BRANCH,AMSRL,EP,RA, FT MONMOUTH, NJ 07703 USA
关键词
D O I
10.1016/0026-2714(95)93067-K
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The functional relationship between temperature and microelectronic reliability is presently characterized by an Arrhenius relationship. The Arrhenius relationship encourages lowering temperature to achieve reliability goals. In this paper, the role of temperature in achieving cost-effective reliable electronic equipment has been investigated. The effect of temperature on reliability has been evaluated based on failure mechanisms and electrical parameter variations. The device investigated in this paper is assumed to consist of a bipolar or MOSFET (silicon) semiconductor device with device packaging consisting of first-level interconnects that may be wirebonds, flip-chip, or tape automated bonds, die attachment, substrate attachment, case, lid, lid seal and lead seal. Failure mechanisms actuated under various temperature stresses, including steady-state temperature, temperature cycling, temperature gradients, and time-dependent temperature change, have been identified for each of the package elements. A methodology for derivation of the functional relationship between temperature and microelectronic reliability has been discussed.
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页码:377 / 402
页数:26
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