GAAS-MESFET FOR DIGITAL APPLICATION

被引：8
|
作者：
KOHN, E [1 ]
机构：
[1] RHEIN WESTFAL TH,INST HALBLEITER TECH,D-5100 AACHEN,FED REP GER
来源：
SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 01期
关键词：
D O I：
10.1016/0038-1101(77)90030-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：29 / &
相关论文
共 50 条
  • [21] CURRENT STATUS OF GAAS-MESFET RELIABILITY
    NAGAO, H
    TAKEUCHI, T
    KATSUKAWA, K
    IKUMA, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C446 - C446
  • [22] GAAS-MESFET MODEL FOR CIRCUIT SIMULATION
    GEORGE, P
    KO, PK
    HU, CM
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1989, 66 (03) : 379 - 397
  • [23] GAAS-MESFET MODELING AND NONLINEAR CAD
    CURTICE, WR
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (02) : 220 - 230
  • [24] AN IMPROVED GAAS-MESFET MODEL FOR SPICE
    MCCAMANT, AJ
    MCCORMACK, GD
    SMITH, DH
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1990, 38 (06) : 822 - 824
  • [25] GAAS-MESFET TECHNOLOGY AND RELIABILITY ASPECTS
    BRAMBILLA, P
    FANTINI, F
    GUARINI, G
    MATTANA, G
    PIACENTINI, GF
    ALTA FREQUENZA, 1986, 55 (03): : 181 - 193
  • [26] COMPARISON OF GAAS-MESFET NOISE FIGURES
    GORONKIN, H
    NAIR, V
    IEEE ELECTRON DEVICE LETTERS, 1985, 6 (01) : 47 - 49
  • [27] NOISE TUNING OF GAAS-MESFET OSCILLATORS
    KREISCHER, L
    ELECTRONICS LETTERS, 1990, 26 (05) : 315 - 316
  • [28] DISTORTION IN GAAS-MESFET SWITCH CIRCUITS
    CAVERLY, RH
    MICROWAVE JOURNAL, 1994, 37 (09) : 106 - &
  • [29] GAAS-MESFET COMPARATORS FOR GIGABIT-RATE ANALOG-TO-DIGITAL CONVERTERS
    UPADHYAYULA, LC
    RCA REVIEW, 1980, 41 (02): : 198 - 212
  • [30] BACKGATING IN ION-IMPLANTED GAAS-MESFET
    TANG, WC
    LOWE, KS
    ABDELMOTALEB, I
    YOUNG, L
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) : 2794 - 2795
12345