SPONTANEOUS SWITCHING OF P-N-P-N DEVICES

被引：0
|
作者：
KUZMIN, VA
BRAZHNIK.VA
机构：
来源：
RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR | 1967年 / 12卷 / 04期
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：618 / +
页数：1
相关论文
共 50 条
  • [21] NOISE IN P-N-P-N DIODES
    PRESTHOLDT, DL
    VANDERZI.A
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (06) : 336 - +
  • [22] THEORY OF SWITCHING OFF A P-N-P-N STRUCTURE BY A REVERSE ANODIC VOLTAGE
    LEBEDEV, AA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (07): : 874 - &
  • [23] MULTITERMINAL P-N-P-N SWITCHES
    ALDRICH, RW
    HOLONYAK, N
    PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1236 - 1239
  • [24] P-N-P-N TRANSISTOR SWITCHES
    MOLL, JL
    TANENBAUM, M
    GOLDEY, JM
    HOLONYAK, N
    PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (09): : 1174 - 1182
  • [25] LATERAL P-N-P-N DEVICE
    HUANG, JST
    SOLID-STATE ELECTRONICS, 1968, 11 (08) : 779 - &
  • [26] VARIATION OF SWITCHING TIME OF SILICON P-N-P-N STRUCTURES IRRADIATED BY FAST ELECTRONS
    KORSHUNOV, FP
    MARCHENKO, IG
    TROSHCHINSKII, VT
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 89 (02): : K227 - K230
  • [27] MONITORING THE QUALITY OF P-N-P-N STRUCTURES
    SEMENOV, GM
    MIKHEEVA, NI
    SOVIET JOURNAL OF NONDESTRUCTIVE TESTING-USSR, 1978, 14 (12): : 1071 - 1074
  • [28] GAAS P-N-P-N LASER DIODE
    LOCKWOOD, HF
    ETZOLD, KF
    STOCKTON, TE
    MARINELLI, DP
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1974, QE10 (07) : 567 - 569
  • [29] BIDIRECTIONAL TRIODE P-N-P-N SWITCHES
    GENTRY, FE
    SCACE, RI
    FLOWERS, JK
    PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (04): : 355 - &
  • [30] GRAPHICAL ANALYSIS OF I-V CHARACTERISTICS OF GENERALIZED P-N-P-N DEVICES
    GIBBONS, JF
    PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08): : 1366 - &
12345