ANNEALING STAGE OF ELECTRON RADIATION DAMAGES IN IN-DOPED N-TYPE CDTE CRYSTALS

被引：1
|
作者：
MATSUURA, K [1 ]
TSURUMI, I [1 ]
机构：
[1] TOTTORI UNIV,FAC ENGN,DEPT ELECTR,KOYAMA,JAPAN
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1975年 / 28卷 / 02期
关键词：
D O I：
10.1002/pssa.2210280258
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：K175 / K178
页数：4
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